Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs Mock Test of Class 12th Physics

Welcome to your Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs Mock Test of Class 12th Physics

1. 
Q.1. The ratio of forward biased to reverse biased resistance for p-n junction diode is
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Q.2. In the middle of the depletion layer of a reverse- biased p-n junction, the
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Q.3. Bridge type rectifier uses
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Q.4. In a semiconductor
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Q.5. Let nh and ne be the number of holes and conduction electrons in an extrinsic semiconductor. Then
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Q.6. A p-type semiconductor is
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Q.7. Electric conduction in a semiconductor takes place due to
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Q.8. The impurity Semiconductor Electronics: Materials, Devices and Simple Circuits with which pure silicon may be doped to make it a p-type semiconductor are those of
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Q.9. The electrical conductivity of pure germanium can be increased by
10. 
Question 10. On applying reverse bias to a junction diode, it:
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Question 11. For germanium crystal, the forbidden energy gap in joules
12. 
Question 12. To obtain electrons as majority charge carriers in a semiconductors the impurity mixed is:
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Question 13. In the middle of the depletion layer of a reverse biased p-n junction, the:
14. 
Question 14. In a common base amplifier the phase difference between the input signal voltage and output voltage is :
15. 
Q.15. The resistivity of a semiconductor at room temperature is in between
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Q.16. Number of electrons in the valence shell of a pure semiconductor is
17. 
Q.17. In a semiconductor, the forbidden energy gap between the valence band and the conduction band is of the order is
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Q.18. The forbidden energy gap for germanium crystal at 0 K is
19. 
Q.19. In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
20. 
Q.20. What is the resistivity of a pure semiconductor at absolute zero ?
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Q.21. Temperature coefficient of resistance of semiconductor is
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Q.22. In a p-type semiconductor, the acceptor valence band is
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Q.23. In an n-type semiconductor, donor valence band is
24. 
Q.24. The mobility of free electrons is greater than that of free holes because
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Q.25. The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by
26. 
Q.26. In semiconductors, at room temperature
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Q.27. At absolute zero, Si acts as
28. 
Q.28. One serious drawback of semi-conductor devices is
29. 
Q.29. When an impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor
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Q.30. An electric field is applied to a semiconductor. Let the number of charge carriers be n and the average drift speed be v. If the temperature is increased
31. 
Q.31. If a small amount of antimony is added to germanium crystal
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Q.32. By increasing the temperature, the specific resistance of a conductor and a semiconductor
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Q.33. A strip of copper and another of germanium are cooled from room temperature to 80K. The resistance of
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Q.34. Carbon, Silicon and Germanium Semiconductor Electronics: Materials, Devices and Simple Circuits have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationship is true in their case?
35. 
Q.35. A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be a/an
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Q.36. If the two ends of a p-n junction are joined by a wire
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Q.37. The drift current in a p-n junction is from the
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Q.38. The diffusion current in a p-n junction is from the
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Q.39. Diffusion current in a p-n junction is greater than the drift current in magnitude
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Q.40. Forward biasing is that in which applied voltage
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Q.41. In V-I characteristic of a p-n junction, reverse biasing results in
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Q.42. In reverse biasing
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Q.43. Zener diode is used for
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Q.44. Filter circuit
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Q.45. For a junction diode the ratio of forward current (If) and reverse current (Ir) is [e = electronic charge, V = voltage applied across junction, k = Boltzmann constant, T = temperature in kelvin]
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Q.46. In a semiconductor diode, the barrier potential offers opposition to
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Q.47. In a P -N junction
48. 
Q.48. Barrier potential of a P-N junction diode does not depend on
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Q.49. Reverse bias applied to a junction diode
50. 
Q.50. In forward biasing of the p–n junction

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